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This invention relates to a semiconductor integrated circuit and more particularly to a semiconductor integrated circuit used for a memory circuit having a large storage capacity and of a non-volatile type. A so-called flash memory is known as a memory of a non-volatile type. The flash memory stores information in the form of electrical charges in a floating gate in a memory cell. As a result of writing of data to the memory cell, the charges are stored in the floating gate. By removing the stored charges from the floating gate, the stored data can be erased. This is the reason why the flash memory can maintain stored data even after the power supply thereto is turned off. On the other hand, the amount of the charges stored in the floating gate is finite, and the number of times that the data can be written is limited. Therefore, in order to make it possible to write data a large number of times, an after-writing verifying step is carried out. In the after-writing verifying step, data to be written is read out of the memory cell, and then, if the read data and the write data are identical, the written data is determined to be good. If the two data are not identical, on the other hand, the written data is determined to be bad. In this manner, the data can be written a large number of times. In the after-writing verifying step, a comparison is made between the read data and the write data stored in the memory cell. In order to make the comparison possible, the read data and the write data are compared at every bit, i.e., every word of the memory. Consequently, the after-writing verifying step requires a large number of steps, which inevitably increase the time taken to write the data. A concept has been known in which the storage capacity of the memory cell is reduced by storing the data in such a manner that, after a first writing step, the stored data is not changed. A cell array in such a case is divided into a plurality of blocks, and the data is stored in a region common to the plurality of blocks. The problem with this kind of data storage is that a storage capacity cannot be increased. Therefore, a memory is recently developed in which the data is not written immediately after the data is stored in the memory, but the data is rewritten to the memory cell for an indefinite period of time after the data is stored. This memory is hereinafter referred to as a flash memory of a rewrite-

 

 

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Zertifikat B1 Neu Pdf 93

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